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RoHS Compliant Product A suffix of '-C' specifies halogen & lead-freeTO-92 COLLECTOR BASE FEATURES
. Epitaxial Planar Die Construction11. EMITTER 2Complementary PNP Type Available 3 (MPS2907A) . Ideal for Medium Power Amplification and SwitchingA compact audio powerhouse ideal for guitar or PA work or for use as a general-purpose subwoofer or hifi amplifier. Many people prefer Mosfets because of their legendary ruggedness. Need for speed for mac torrent download. Altronics had a. The general purpose MOSFET portfolio covers voltage classes up to 100V. It includes single and dual N-channel MOSFETs as well as products for smaller power handling (single and dual N- and P-channel MOSFETs). Linux for mac os x download. The selected parts come in a wide range of packages including SOT23, PQFN (2x2, 3x3, 5x6), DPAK SO8, SuperSO8 and TO220.
MAXIMUM RATINGS
RATING SYMBOL VALUE UNIT Collector - Emitter Voltage VCEO 40 V Collector - Base Voltage VCBO 75 V Emitter - Base Voltage VEBO 6.0 V Collector Current - Continuous IC 600 mA Total Device Dissipation @ TA = 25 P 625 mW Derate Above 25 D 5.0 mW / Total Device Dissipation @ TC = 25 P 1.5 Watts Derate Above 25 D 12 mW / Operating and Storage Junction Temperature Range TJ, TSTG -55 ~ +150THERMAL CHARACTERISTICS
Bta16 600b How To Use
CHARACTERISTIC SYMBOL MAX. UNIT Thermal Resistance, Junction to Ambient R JA 200 / W Thermal Resistance, Junction to Case R JC 83.3 / WELECTRICAL CHARACTERISTICS (TA = 25 unless otherwise noted)
CHARACTERISTIC SYMBOL Min. Max. UNITOFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage V(BR)CEO 40 - V (IC = 10 mA, IB = 0) Collector - Base Breakdown Voltage V 75 - V (IC = 10 µA, IE = 0) (BR)CBO Emitter - Base Breakdown Voltage V(BR)EBO 6.0 - V (IE = 10 µA, IC = 0) Collector Cutoff Current ICEX - 10 nA (VCE = 60 V, VEB(oFF) = 3.0 V) Collector Cutoff Current (VCB = 60 V, IE = 0) ICBO - 0.01 µA (VCB = 60 V, IE = 0, TA = 150 ) - 10 Emitter Cutoff Current IEBO - 10 nA (VEB = 3.0 V, IC = 0) Collector Cutoff Current ICEO - 10 nA (VCE = 10 V) Base Cutoff Current IBEX - 20 nA (VCE = 60 V, VEB(oFF) = 3.0 V) 01-Jun-2002 Rev. A Page1 of 6, ELECTRICAL CHARACTERISTICS (TA = 25 unless otherwise noted) (Continued)
Good General Purpose Mosfets
CHARACTERISTIC SYMBOL Min. Max. UNITON CHARACTERISTICS
How A Mosfet Works
DC Current Gain (IC = 0.1 mA, VCE = 10 V) 35 - (IC = 1.0 mA, VCE = 10 V) 50 - (IC = 10 mA, VCE = 10 V) h 75 - - (IC = 10 mA, VCE = 10 V, TA = -55 ) FE 35 - (I = 150 mA, V = 10 V)(1)C CE 100 300 (IC = 150 mA, VCE = 1.0 V) (1) 50 - (IC = 500 mA, VCE = 10 V) (1) 40 - Collector - Emitter Saturation Voltage(1) (IC = 150 mA, IB = 15 mA) VCE(sat) - 0.3 V (IC = 500 mA, IB = 50 mA) - 1.0 Base - Emitter Saturation Voltage(1) (IC = 150 mA, IB = 15 mA) VBE(sat) 0.6 1.2 V (IC = 500 mA, IB = 50 mA) - 2.0SMALL - SIGNAL CHARACTERISTICS
Current - Gain - Bandwidth Product(2) fT 300 - MHz (IC = 20 mA, VCE = 20 V, f = 100 MHz) Output Capacitance C - 8.0 pF (VCB = 10 V, IE = 0, f = 1.0 MHz) obo Input Capacitance C - 25 pF (VEB = 0.5 V, IC = 0, f = 1.0 MHz) ibo Input Impedance (IC = 1.0 mA, VCE = 10 V, f = 1.0 KHz) hie 2.0 8.0 K (IC = 10 mA, VCE = 10 V, f = 1.0 KHz) 0.25 1.25 Voltage Feedback Ratio (IC = 1.0 mA, V -4 CE = 10 V, f = 1.0 KHz) hre - 8.0 X 10 (IC = 10 mA, VCE = 10 V, f = 1.0 KHz)) - 4.0 Small - Signal Current Gain (IC = 1.0 mA, VCE = 10 V, f = 1.0 KHz) hfe 50 300 - (IC = 10 mA, VCE = 10 V, f = 1.0 KHz) 75 375 Output Admittance (IC = 1.0 mA, VCE = 10 V, f = 1.0 KHz) hoe 5.0 35 µmhos (IC = 10 mA, VCE = 10 V, f = 1.0 KHz) 25 200 Collector Base Time Constant r , C - 150 ps (IE = 20 mA, VCB = 20 V, f = 31.8 KHz) b C Noise Figure N - 4.0 dB (IC = 100 µA, VCE = 10 V, RS = 1.0 K , f = 1.0 KHz)F SWITCHING CHARACTERISTICS
Delay Time (VCC = 30 V, VBE(off) = -2.0 V, td - 10 ns Rise Time IC = 150 mA, IB1 = 15 mA) (Figure 1) tr - 25 ns Storage Time (VCC = 30 V, IC = 150 mA, ts - 225 ns Fall Time IB1 = IB2 = 15 mA) (Figure 2) tf - 60 ns 1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0 %. 2. fT is defined as the frequency at which | hfe | extrapolates to unity. 01-Jun-2002 Rev. A Page2 of 6,SWITCHING TIME EQUIVALENT TEST CIRCUITS
µ µ ≈ ≈General Purpose P-channel Mosfet
Ω
! Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn–On Time Figure 2. Turn–Off Time # ' 01'° '° # '° ' ' # ' # ' # ' # $%%&&& '()* Figure 3. DC Current Gain 01'° . $1 () () ' () ' () ' ' ' ' ' $//)&& '()* Figure 4. Collector Saturation Region 01-Jun-2002 Rev. A Page3 of 6 %%&-$&%),'%* +&& ,)$, ' $2$/1 1 01'° $2$/1 ′ 1 2.6 $ # / 1$/ 341 ' 01'° 54/'66*1 54/'66*1 # ' 6 # ' # ' ' # ' # ' ' # ' # ' $%%&&& '()* $%%&&& '()* Figure 5. Turn–On Time Figure 6. Turn–Off Time &1%:$-- 61 89 $ 1 ()& 1' Ω &1%& . . ' µ)&1 Ω &1&$) $1' µ) µ)&1 Ω µ) ' µ)&1 Ω ' µ) () ' ' ' ' ' ' ' ' 6&7 '89* &%&&$) '%8-* Figure 7. Frequency Effects Figure 8. Source Resistance Effects ' 01'° =< # ' ;< # ' ' # ' # ' ' # ' # &&%),'%* $%%&&& '()* Figure 9. Capacitances Figure 10. Current–Gain Bandwidth Product 01-Jun-2002 Rev. A Page4 of 6 ):)$) '* %$$,&'5/* $-' * 6&& ,)$ /) >$8:&%'-89* %$$,&'5/* $-' *, ' 01'° . &63' ?* /' ?*4$2$/1 ' /' *41 ' &/63/ ' ?*4$2$/1 ' ' ' ' ' ' ' ' ' $%%&&& '()* $%%&&& '()* Figure 11. “On” Voltages Figure 12. Temperature Coefficients 01-Jun-2002 Rev. A Page5 of 6 %),'%* %$$ '(2°*,TO-92 PACKAGE OUTLINE DIMENSIONS
Mosfet Selector
Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.400 4.700 0.173 0.185 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e 1.270TYP 0.050TYP e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 Ö 1.600 0.063 0.000 0.380 0.000 0.015 01-Jun-2002 Rev. A Page6 of 6]
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